SBC846BWT1G datasheet

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• Маркировка
  SBC846BWT1G
• Производитель
  ON Semiconductor
• Описание
  ON Semiconductor SBC846BWT1G Collector- Base Voltage Vcbo: 80 V Collector- Emitter Voltage Vceo Max: 65 V Collector-emitter Saturation Voltage: 0.6 V Configuration: Single Continuous Collector Current: 100 mA Dc Current Gain Hfe Max: 450 Emitter- Base Voltage Vebo: 6 V Gain Bandwidth Product Ft: 100 MHz Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 150 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SC-70 Transistor Polarity: NPN Collector- Base Voltage VCBO: 80 V Collector- Emitter Voltage VCEO Max: 65 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 0.6 V Gain Bandwidth Product fT: 100 MHz DC Current Gain hFE Max: 450
• Количество страниц
  13 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  143,31 KB

SBC846BWT1G datasheet скачать

SBC846BWT1G datasheet